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STP45N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP45N65M5
Descripción Electrónicos  N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 23 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
-
79.5
11
9.3
16
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
35
140
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 35 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 19)
-
392
7.4
38
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 19)
-
468
9.7
42
ns
µC
A



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