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BC856 Datasheet(PDF) 2 Page - Continental Device India Limited

No. de pieza BC856
Descripción Electrónicos  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC856 Datasheet(HTML) 2 Page - Continental Device India Limited

  BC856 Datasheet HTML 1Page - Continental Device India Limited BC856 Datasheet HTML 2Page - Continental Device India Limited BC856 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BC856 BC857 BC858
Collector–base voltage (open emitter)
–VCBO
max.
80
50
30 V
Collector–emitter voltage (+VBE = 1 V)
–VCEX
max.
80
50
30 V
Collector–emitter voltage (open base)
–VCEO
max.
65
45
30 V
Emitter–base voltage (open collector)
–VEBO
max.
5
5
5 V
Collector current (d.c.)
–IC
max.
100
mA
Collector current (peak value)
–ICM
max.
200
mA
Emitter current (peak value)
IEM
max.
200
mA
Base current (peak value)
–IBM
max.
200
mA
Total power dissipation
up to Tamb: 60 °C
Ptot
max.
250
mW
Storage temperature
Tstg
–55 to +150
°C
Junction temperature
Tj
max.
150
°C
THERMAL CHARACTERISTICS
Tj = Px (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
From junction to tab
Rth j–t
=60
K/W
From tab to soldering points
Rth t–s
=
280
K/W
From soldering points to ambient
Rth s–a
=90
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 30V;
Tj = 25°C
–ICBO
typ.
1
nA
<15
nA
Tj = 150° C
–ICBO
<4
m
A
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
–VBE
typ.
650
mV
600 to 750
mV
–IC = 10 mA; –VCE = 5 V
–VBE
<
820
mV
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA
–VCEsat
typ.
75
mV
<
300
mV
–VBEsat
typ.
700
mV
–IC = 100 mA; –IB = 5 mA
–VCEsat
typ.
250
mV
<
650
mV
–VBEsat
typ.
850
mV
Knee voltage
–IC = 10 mA; –IB = value for which
–IC = 11 mA at –VCE = 1 V
–VCEK
typ.
250
mV
<
600
mV
BC856 BC857
BC858



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