BC856 datasheet(1/3 Pages) CDIL

No. de pieza	BC856

Descripción Electrónicos	SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	3 Pages

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Fabricante Electrónico	CDIL [Continental Device India Limited]

Página de inicio	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON PLANAR EPITAXIAL TRANSISTORS

P–N–P transistors

Marking

BC856 = 3D

BC856A = 3A

BC856B = 3B

BC857 = 3H

BC857A = 3E

BC857B = 3F

BC857C = 3G

BC858 = 3M

BC858A = 3J

BC858B = 3K

BC858C = 3L

ABSOLUTE MAXIMUM RATINGS

BC856 BC857 BC858

Collector–emitter voltage (+VBE = 1 V)

–VCEX max. 80

50

30 V

Collector–emitter voltage (open base)

–VCE0 max. 65

45

30 V

Collector current (peak value)

–ICM max.

200

mA

Total power dissipation

up to Tamb = 60 °C

Ptot

max.

250

mW

Junction temperature

Tj

max.

150

° C

Small–signal current gain

–IC = 2 mA; –VCE = 5 V; f = 1 kHz

hfe

75 to 900

Transition frequency at f = 100 MHz

–IC = 10 mA; –VCE = 5 V

fT

>

100

MHz

Noise figure at RS = 2 kW

–IC = 200 mA; –VCE = 5 V

f = 1 kHz; B = 200 Hz

F

<

10

dB

BC856 BC857

BC858

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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BC856 Datasheet(PDF) 1 Page - Continental Device India Limited

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