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STGP35N35LZ Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGP35N35LZ
Descripción Electrónicos  Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP35N35LZ Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2013
DocID12253 Rev 6
1/18
STGB35N35LZ
STGP35N35LZ
Automotive-grade 345 V internally clamped IGBT, E
AS
450 mJ
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Low threshold voltage
• Low on-voltage drop
• High voltage clamping feature
• Logic level gate charge
• ESD gate-emitter protection
• Gate and gate-emitter integrated resistors
Application
• Automotive ignition
Description
This application specific IGBT utilizes the most
advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gate-
emitter provide overvoltage protection
capabilities. The device also exhibits low on-state
voltage drop and low threshold drive for use in
automotive ignition system.
D²PAK
I²PAK
1
3
TAB
1
2
3
TAB
TO-220
1
2
3
TAB
C (2 or TAB)
E (3)
G (1)
RG
RGE
SC30180
Table 1. Device summary
Order codes
Marking
Package
Packaging
STGB35N35LZ-1
GB35N35LZ
I²PAK
Tube
STGB35N35LZT4
GB35N35LZ
D²PAK
Tape and reel
STGP35N35LZ
GP35N35LZ
TO-220
Tube
www.st.com


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