6-383

MSA-0686 Absolute Maximum Ratings

Parameter

Device Current

50 mA

200 mW

RF Input Power

+13dBm

Junction Temperature

150

°C

Storage Temperature

–65 to 150

°C

θ

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

3. Derate at 8.3 mW/

°C for T

4. See MEASUREMENTS section “Thermal Resistance” for more information.

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-0686-TR1

1000

7" Reel

MSA-0686-BLK

100

Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

f = 0.1 GHz

dB

20.0

f = 0.5 GHz

16.5

18.5

Gain Flatness

f = 0.1 to 0.5 GHz

dB

± 0.7

3 dB Bandwidth

GHz

0.8

Input VSWR

f = 0.1 to 1.5 GHz

1.7:1

Output VSWR

f = 0.1 to 1.5 GHz

1.7:1

NF

50

Ω Noise Figure

f = 0.5 GHz

dB

3.0

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

2.0

Third Order Intercept Point

f = 0.5 GHz

dBm

14.5

Group Delay

f = 0.5 GHz

psec

225

Device Voltage

V

2.8

3.5

4.2

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Notes:

1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current

is on the following page.

Symbol

Parameters and Test Conditions: I

Units

Min.

Typ.

Max.

VSWR