FSYC360D datasheet(4/8 Pages) INTERSIL

No. de pieza	FSYC360D

Descripción Electrónicos	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	INTERSIL [Intersil Corporation]

Página de inicio	http://www.intersil.com/cda/home

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4 / 8 page

Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO

LIMIT GAMMA DOT CURRENT TO IAS

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. TYPICAL NORMALIZED rDS(ON) vs JUNCTION

TEMPERATURE

-10

-15

-20

-25

-5

VGS (V)

LET = 37MeV/mg/cm2, RANGE = 36

300

200

100

LET = 26MeV/mg/cm2, RANGE = 43

400

500

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

300

100

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

100A

30A

1E-7

1E-3

TC, CASE TEMPERATURE (

oC)

150

100

-50

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

100

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

10ms

1ms

100

µs

100

1000

TC = 25

0.1

CHARGE

QGD

QGS

12V

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

2.5

PULSE DURATION = 250

µs, VGS = 12V, ID = 13A

FSYC360D, FSYC360R

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