Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

FSYC360D Datasheet(PDF) 3 Page - Intersil Corporation

No. de pieza FSYC360D
Descripción Electrónicos  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYC360D Datasheet(HTML) 3 Page - Intersil Corporation

  FSYC360D Datasheet HTML 1Page - Intersil Corporation FSYC360D Datasheet HTML 2Page - Intersil Corporation FSYC360D Datasheet HTML 3Page - Intersil Corporation FSYC360D Datasheet HTML 4Page - Intersil Corporation FSYC360D Datasheet HTML 5Page - Intersil Corporation FSYC360D Datasheet HTML 6Page - Intersil Corporation FSYC360D Datasheet HTML 7Page - Intersil Corporation FSYC360D Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
3
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
4100
-
pF
Output Capacitance
COSS
-
520
-
pF
Reverse Transfer Capacitance
CRSS
-
160
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.6
oC/W
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 21A
0.6
-
1.8
V
Reverse Recovery Time
trr
ISD = 21A, dISD/dt = 100A/µs
-
-
1100
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
400
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 320V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 21A
-
4.85
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 13A
-
0.210
Ω
NOTES:
1. Pulse test, 300
µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
µ)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
-15
400
Ni
26
43
-20
360
Br
37
36
-5
400
Br
37
36
-10
320
Br
37
36
-15
200
Br
37
36
-20
80
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
FSYC360D, FSYC360R



Html Pages

1 2 3 4 5 6 7 8


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com