R5F6451MLFD datasheet(86/122 Pages) RENESAS

86 / 122 page

R01DS0072EJ0120 Rev.1.20

Page 86 of 116

Aug 07, 2013

R32C/151 Group

5. Electrical Characteristics

Notes:

Program/erase definition

This value represents the number of erasures per block.

When the number of program/erase cycles is n, each block can be erased n times.

For example, if a 4-word write is performed in 512 different addresses in the 4-Kbyte block A and

then the block is erased, this is counted as a single program/erase operation.

However, the same address cannot be written to more than once per erasure (overwrite disabled).

Data retention includes periods when no supply voltage is applied and no clock is provided.

This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C.

Contact a Renesas Electronics sales office for data retention times other than the above condition.

Table 5.8

Electrical Characteristics of Flash Memory

(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)

Symbol

Characteristic

Value

Unit

Min.

Typ.

Max.

—

Program/erase cycles (1)

Program area

1000

Cycles

Data area

10000

Cycles

—

4-word program time

Program area

150

900

µs

Data area

300

1700

µs

—

Lock bit program time

Program area

500

µs

Data area

140

1000

µs

—

Block erasure time

4-Kbyte block

0.12

3.0

32-Kbyte block

0.17

3.0

64-Kbyte block

0.20

3.0

—

Data retention (2)

Ta = 55°C (3, 4)

Years

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