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2SC4093 Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza 2SC4093
Descripción Electrónicos  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
PDF  9 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4093 Datasheet(HTML) 4 Page - Renesas Technology Corp

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ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
1.0
µA
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
−
7.0
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1.0 GHz
11
13
−
dB
Noise Figure
NF
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
−
1.1
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
−
0.6
0.95
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R26/RBF
Note
R27/RBG
Note
R28/RBH
Note
Marking
R26
R27
R28
Range
50 to 100
80 to 160
125 to 250
Note Old Specification / New Specification
Data Sheet PU10519EJ01V0DS
2
2SC4093



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