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2SC4093 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SC4093 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page ![]() DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain. FEATURES • Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High Power gain S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • Maximum available power gain: MAG = 14.2 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC4093 50 pcs (Non reel) 2SC4093-T1 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD The mark shows major revised points. Document No. PU10519EJ01V0DS (1st edition) (Previous No. P10365EJ3V1DS00) Date Published October 2004 CP(K) Printed in Japan © NEC Compound Semiconductor Devices, Ltd. 1991, 2004 |
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