STT02N20 datasheet(1/8 Pages) SAMHOP

No. de pieza	STT02N20

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

Logo

1 / 8 page

S mHop Microelectronics C orp.

a

STT02N20

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

200

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω) Typ

200V

1.4A

1.29

@

VGS=4.5V

1.22

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Surface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

c

A

Ver 1.0

www.samhop.com.tw

May,22,2014

1

Details are subject to change without notice.

W

PD

°C

-55 to 150

TA=25°C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

TA=70°C

A

EAS

mJ

Single Pulse Avalanche Energy d

TA=70°C

W

a

3.75

1.4

9

3

Green

Product

1.1

1.9

TA=25°C

G

S

STT SERIES

SOT - 223

THERMAL CHARACTERISTICS

42

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

a

c

S

G

D

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STT02N20 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

STT02N20 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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