STT03L06 datasheet(1/8 Pages) SAMHOP

No. de pieza	STT03L06

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

Logo

1 / 8 page

S mHop Microelectronics C orp.

a

STT03L06

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

60

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

60V

3A

125

@

VGS=4.5V

100

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Surface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.0

www.samhop.com.tw

Jul,10,2013

1

Details are subject to change without notice.

W

PD

°C

-55 to 150

TA=25°C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

TA=70°C

A

EAS

mJ

Single Pulse Avalanche Energy d

TA=70°C

W

a

12

3

20

3

Green

Product

2.4

1.9

G

D

S

TA=25°C

G

S

STT SERIES

SOT - 223

THERMAL CHARACTERISTICS

42

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

a

e

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STT03L06 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

STT03L06 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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