Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

STT03L06 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STT03L06
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT03L06 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

  STT03L06 Datasheet HTML 1Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 2Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 3Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 4Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 5Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 6Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 7Page - SamHop Microelectronics Corp. STT03L06 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
81
gFS
S
CISS
496
pF
COSS
44
pF
CRSS
31
pF
Qg
10.4
nC
11.6
18
9.2
tD(ON)
7.3
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=1.5A
VDS=10V , ID=1.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=1.3A
100
94
125
m ohm
c
f=1.0MHz
c
STT03L06
Ver 1.0
www.samhop.com.tw
Jul,10,2013
2
nC
Qgs
nC
Qgd
1.1
1.9
Gate-Drain Charge
Gate-Source Charge
VDS=50V,ID=1.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
nC
4
VDS=50V,ID=1.5A,VGS=10V
VDS=50V,ID=1.5A,VGS=4.5V
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.83
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
e.Drain current limited by maximum junction temperature.
_
_
_
11.7
3
5.2



Html Pages

1 2 3 4 5 6 7 8


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com