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STT432S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STT432S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT432S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
V
9
gFS
S
CISS
1160
pF
COSS
218
pF
CRSS
140
pF
Qg
18.2
nC
26
65
16
tD(ON)
22
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=11A
VDS=5V , ID=11A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=10A
11.5
11
15
m ohm
c
f=1.0MHz
c
STT432S
Ver 1.0
www.samhop.com.tw
Aug,04,2009
2
VSD
nC
Qgs
nC
Qgd
2.5
5.4
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=20V,ID=11A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.5A
0.76
1.2
V
IS
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
Notes
nC
11.2
VDS=20V,ID=11A,VGS=10V
VDS=20V,ID=11A,VGS=4.5V
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
_
1
1.5
3
40



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