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STUD339S Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

No. de pieza STUD339S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD339S Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

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STU/D339S
Ver 1.0
www.samhop.com.tw
Aug,17,2012
3
Tj( °
C)
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C)
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C)
Figure 6. Breakdown Voltage Variation
with Temperature
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
35
28
21
14
0
0.8
1.6
2.4
3.2
4.0
4.8
7
20
15
10
5
0
20
40
60
80
1
25
0
25
50
125
100
75
V GS =10V
ID=20A
V GS =4.5V
ID=16A
150
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125 150
V DS =V GS
ID=250uA
-50
-25
0
25
50
75
100
125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA
V GS =4.5V
V GS =3V
-55 C
Tj=125 C
1.6
1.4
1.2
1.0
1.8
2.0
V GS =5V
25 C
V GS =3.5V
V GS =4V
V GS =10V
0
VGS=10V
VGS=4.5V
0



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