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STUD339S Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

No. de pieza STUD339S
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD339S Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STU/D339S
Ver 1.0
www.samhop.com.tw
Aug,17,2012
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
0.1
1
10
100
10
1
Ciss
Coss
Crss
1200
1000
800
600
400
200
0
10
15
20
25
30
0
5
30
25
20
15
10
5
0
10
0
ID=20A
25 C
75 C
125 C
10
1
10
8
6
4
2
0
VDS=15V
ID=20A
110
100
1
10
100
300
VDS=15V,ID=1A
VGS=10V
TD(on)
TD(off)
Tf
Tr
R
DS
(O
N)
Li
m
it
VGS=10V
Single Pulse
TA=25 C
100u
s
DC
10
ms
1m
s
1.25
1.00
0.75
0.50
0.25
0
75 C
016
14
12
10
8
6
4
2
8
6
4
2
20
25 C
125 C



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