CHA2090

17-24GHz Low Noise Amplifier

Ref. : DSCHA20909347-13 Dec 99

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Main Characteristics

Tamb = +25°C, Vd=4.5V, Pads B, D, E=GND

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

17

24

GHz

NF

Noise figure (1)

2

3

dB

G

Gain (1)

19

23

dB

Pout

Pout -1dB gain compression

10

dBm

VSWRin

Input VSWR (1)

2.0:1

2.5:1

VSWRout

Output VSWR (1)

2.0:1

2.5:1

Vdd

Positive Drain voltage (2)

4.5

5.0

V

(1) These values are representative of on-wafer measurements that are made without bonding wires

at the RF ports. When the chip is attached with typical 0.15nH input and output bonding wires, the

indicated parameter values should be improved.

(2) See chip biasing option page 7/8.

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage (3)

5.5

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

(3) See chip biasing option page 7/8.