UT100N03-Q

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-625.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

100

A

Pulsed Drain Current (Note 2)

400

A

Single Pulsed Avalanche Current (Note 3)

35

A

Single Pulsed Avalanche Energy (Note 3)

875

mJ

Power Dissipation

TO-220/TO-263

100

W

DFN-8(5×6)

21

W

Derate above 25°C

TO-220/TO-263

0.67

W/°C

DFN-8(5×6)

0.168

W/°C

Junction Temperature

+175

°C

Strong Temperature

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

62.5

°C/W

DFN-8(5×6)

40.3 (Note 1, 2)

°C/W

Junction to Case

TO-220/TO-263

1.5

°C/W

DFN-8(5×6)

6 (Note 1, 2)

°C/W

Notes: 1. Maximum under Steady State conditions is 90 °C/W.

2. Surface Mounted on 1" x 1" FR4 board.