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UT100N03G-TQ2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT100N03G-TQ2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-625.B 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 5.3mΩ @ VGS =10V, ID =50A * RDS(ON) < 8.0mΩ @ VGS =4.5V, ID =40A SYMBOL 1.Gate 3.Source 2.Drain TO-220 1 TO-263 1 DFN-8(5x6) 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 UT100N03L-TA3-T UT100N03G-TA3-T TO-220 G D S - - - - - Tube UT100N03L-TQ2-T UT100N03G-TQ2-T TO-263 G D S - - - - - Tube UT100N03L-TQ2-R UT100N03G-TQ2-R TO-263 G D S - - - - - Tape Reel - UT100N03G-K08-5060-R DFN-8(5×6) S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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