ACE7402M datasheet(1/7 Pages) ACE

No. de pieza	ACE7402M

Descripción Electrónicos	N-Channel 30-V MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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ACE7402M

N-Channel 30-V MOSFET

VER 1.1

1

Description

The ACE7402M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This

device is suitable for use as a high side switch in SMPS and general purpose applications.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

TA=25

OC

ID

20

A

TA=70

OC

16

Pulse Drain Current

b

IDM

50

Continuous Drain Current (Diode Continuous)

a

IS

6.4

A

Power Dissipation

a

TA=25

OC

PD

5

W

TA=70

OC

3.2

Operating Junction and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t≦10sec

RθJA

25

℃/W

Steady State

65

℃/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

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ACE7402M Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE7402M Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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