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STL50DN6F7 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STL50DN6F7
Descripción Electrónicos  High avalanche ruggedness
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL50DN6F7 Datasheet(HTML) 1 Page - STMicroelectronics

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November 2015
DocID028132 Rev 2
1/15
This is information on a product in full production.
www.st.com
STL50DN6F7
Dual N-
channel 60 V, 9 mΩ typ., 57 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
STL50DN6F7
60 V
11 mΩ
57 A
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This dual N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packaging
STL50DN6F7
50DN6F7
PowerFLAT™ 5x6 double island
Tape and reel


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