STL50DN6F7 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL50DN6F7

4/15

DocID028132 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID= 1 mA

IDSS

Zero gate voltage drain current

VDS= 60 V,VGS= 0 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 7.5 A

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 30V, f = 1 MHz,VGS= 0 V

1035

Coss

Output capacitance

450

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V, ID = 15 A,

VGS = 10 V

(see Figure 14: "Test circuit for

gate charge behavior")

Qgs

Gate-source charge

5.7

Qgd

Gate-drain charge

5.7

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30V, ID =7.5 A,

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit for

resistive load switching times"

14.5

Rise time

15.3

td(off)

Turn-off delay time

19.4

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

ISD = 15 A, VGS = 0 V

1.2

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs,

VDD = 48 V

(see Figure 15: "Test circuit for

inductive load switching and

diode recovery times")

26.8

Qrr

Reverse recovery charge

14.2

IRRM

Reverse recovery current

1.06

Notes:

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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