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STP10N65K3 Datasheet(PDF) 8 Page - STMicroelectronics

No. de pieza STP10N65K3
Descripción Electrónicos  N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages
PDF  21 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10N65K3 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
8/21
DocID15732 Rev 4
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Maximum avalanche energy vs
temperature
Figure 16. Source-drain diode forward
characteristics
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25 50
100 125 150
ID= 100 µA
AM03930v1
EAS
0
40
TJ(°C)
(mJ)
20
100
60
80
0
20
40
60
80
120 140
100
120
140
160
180
200
220
ID=7.2 A
VDD=50 V
AM03933v1
VSD
0
2
ISD(A)
(V)
1
5
3
4
0.4
0.5
0.6
0.7
0.8
0.9
TJ=-50°C
TJ=150°C
TJ=25°C
8
6
7
0.3
AM03932v1



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