DocID15732 Rev 4

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3

Electrical characteristics

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The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

7.2

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

28.8

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

-320

ns

Reverse recovery charge

-

2

µC

Reverse recovery current

-

13

A

Reverse recovery time

(see Figure 22)

-410

ns

Reverse recovery charge

-

2.9

µC

Reverse recovery current

-

14

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

30

-

-

V