RT3T77M datasheet(1/4 Pages) ISAHAYA

No. de pieza	RT3T77M

Descripción Electrónicos	Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISAHAYA [Isahaya Electronics Corporation]

Página de inicio	http://www.idc-com.co.jp

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PRELIMINARY

RT3T77M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

RT3T77M is compound transistor built with RT1N140

chip and RT1P140 chip in SC-88 package.

FEATURE

Silicon epitaxial type

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

.

OUTLINE DRAWING

Unit：mm

MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

50

V

VEBO

Emitter to Base voltage

6

V

VCEO

Collector to Emitter voltage

50

V

IC

Collector current

100

mA

ICM

Peak Collector current

200

mA

PC

Collector dissipation（Total, Ta=25℃）

150

mW

Tj

Junction temperature

＋

150

℃

Tstg

Storage temperature

-55～＋150

℃

※

PNP built in transistor of ”－”sign is abbreviation.

MARKING

7

T7

１

2

3

6

5

4

.

TERMINAL

CONNECTOR

①：

EMITTER1

②：

BASE1

③：

COLLECTOR2

④：

EMITTER2

⑤：

BASE2

⑥

:COLLECTOR1

JEITA：SC-88

R1

RTr1

①

②

④

⑤

RTr2

③

R1

⑥

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RT3T77M Datasheet(PDF) 1 Page - Isahaya Electronics Corporation

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