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RT3T77M Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

No. de pieza RT3T77M
Descripción Electrónicos  Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
PDF  4 Pages
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Fabricante Electrónico  ISAHAYA [Isahaya Electronics Corporation]
Página de inicio  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT3T77M Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

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PRELIMINARY
RT3T77M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS (RTr1_NPN)
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP)
Limits
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V(BR)CEO
Collector to Emitter break down voltage
IC=100μA,RBE=∞
50
-
-
V
ICBO
Collector cut off current
VCB =50V,IE=0
-
-
0.1
μ
A
hFE
DC forward current gain
VCE=5V,IC=1mA
100
-
-
-
VCE(sat)
Collector to Emitter saturation voltage
IC=10mA,IB=0.5mA
-
0.1
0.3
V
R1
Input resistor
-
7.0
10
13
kΩ
RTr1
-
200
-
fT
Gain band width product
VCE=6V,IE=10mA
RTr2
-
150
-
MHZ
※
PNP built in transistor of ”－”sign is abbreviation.
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
10
100
1000
0.0
0.5
1.0
1.5
2.0
INPUT OFF VOLTAGE VI(off) (V)
VCE=5V
INPUT ON VOLTAGE
VS COLLECTR CURRENT
0.1
1
10
1
10
100
COLLECTOR CURRENT　IC(mA)
VCE=0.2V
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
10
100
1000
10000
0.1
1
10
100
COLLECTOR CURRENT　IC(mA)
VCE=5V



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