MCP8024 datasheet(5/46 Pages) MICROCHIP

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 2013 Microchip Technology Inc.

DS20005228A-page 5

MCP8024

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Input Voltage, VDD........................................................+46.0V

Input Voltage, < 100 ms Transient ...............................+48.0V

Internal Power Dissipation ...........................Internally-Limited

Operating Ambient Temperature Range .......-40°C to +150°C

Operating Junction Temperature (Note 1).....-40°C to +160°C

Transient Junction Temperature* ................................ +170°C

Storage temperature (Note 1) .......................-55°C to +150°C

Digital I/O .......................................................... -0.3V to 5.5V

LV Analog I/O .................................................... -0.3V to 5.5V

ESD and Latch-up protection:

VDD, HV_IN1 pins  12 kV HMM and  750V CDM

All other pins ......................

 4 kV HBM and  750V CDM

Latch-up protection - all pins............................... > 100 mA

† Notice:

Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification

is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

* Notice:

Transient junction temperatures should not

exceed one second in duration. Sustained junction

temperatures above 170°C may impact the device

reliability.

AC/DC CHARACTERISTICS

ectrical Specifications: Unless otherwise noted TJ = -40°C to +150°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Power Supply Input

Input Operating Voltage

VDD

6.0

—

28.0

Operating

Shutdown

Transient Maximum Voltage

VDDmax

—

< 100 ms

Input Quiescent Current

—

171

197

200

900

—

220

—

500

—

AVDD = 13V,

disabled, CE = 0V, TJ = 25°C

disabled, CE = 0V, TJ = 85°C

disabled, CE = 0V, TJ = 130°C

disabled, CE = 0V, TJ = 150°C

active, CE > VDIG_HI_TH

Digital Input/Output

DIGITALI/O

0—

5.5

Digital Open-Drain Drive

Strength

DIGITALIOL

—1—

VDS < 50 mV

Digital Input Rising Threshold

VDIG_HI_TH

1.26

—

Digital Input Falling Threshold

VDIG_LO_TH

——

0.54

Digital Input Hysteresis

VDIG_HYS

—

500

—

Digital Input Current

IDIG

—

0.2

100

—

µA

VDIG = 3.0V

VDIG =0V

Analog Low-Voltage Input

ANALOGVIN

—

5.5

Excludes high voltage

Analog Low-Voltage Output

ANALOGVOUT

0—

VOUT5

Excludes high voltage

BIAS GENERATOR

+12V Regulated Charge Pump

Charge Pump Current

ICP

——mA

VDD = 9.0V

Charge Pump Voltage

VCP

+10

2 * VDD

—V

VDD = 9.0V, ICP = 20 mA

Charge Pump Start

CPSTART

11.0

11.5

—

VDD falling

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation may cause the device operating junction temperature to exceed the

maximum 160°C rating. Sustained junction temperatures above 150°C can impact the device reliability

and OTP data retention.

1000 hour cumulative maximum for OTP data retention (typical).

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