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Data Sheet

AD8104/AD8105

Rev. A | Page 7 of 36

ABSOLUTE MAXIMUM RATINGS

Table 6.

Parameter

Rating

Analog Supply Voltage (VPOS – VNEG)

6 V

Digital Supply Voltage (VDD – DGND)

6 V

Ground Potential Difference (VNEG – DGND)

+0.5 V to −2.5 V

Maximum Potential Difference (VDD – VNEG)

8 V

Common-Mode Analog Input Voltage

VNEG to VPOS

Differential Analog Input Voltage

±2 V

Digital Input Voltage

VDD

Output Voltage (Disabled Analog Output)

(VPOS − 1 V) to

(VNEG + 1 V)

Output Short-Circuit Duration

Momentary

Output Short-Circuit Current

80 mA

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Lead Temperature (Soldering, 10 sec)

300°C

Junction Temperature

150°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 7. Thermal Resistance

Package Type

θJA

θJC

θJB

ψJT

ψJB

Unit

304-Ball BGA

6.5

0.6

5.7

°C/W

POWER DISSIPATION

The AD8104/AD8105 are operated with ±2.5 V or +5 V

supplies and can drive loads down to 100 Ω, resulting in a large

range of possible power dissipations. For this reason, extra care

must be taken derating the operating conditions based on

ambient temperature.

Packaged in a 304-ball BGA, the AD8104/AD8105 junction-to-

ambient thermal impedance (θJA) is 14°C/W. For long-term

reliability, the maximum allowed junction temperature of the

die should not exceed 150°C. Temporarily exceeding this limit

may cause a shift in parametric performance due to a change in

stresses exerted on the die by the package. Exceeding a junction

temperature of 175°C for an extended period can result in

device failure. The following curve shows the range of allowed

internal die power dissipations that meet these conditions over

the −40°C to +85°C ambient temperature range. When using

Table 6, do not include external load power in the maximum

power calculation, but do include load current dropped on the

die output transistors.

AMBIENT TEMPERATURE (°C)

TJ = 150°C

Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature

ESD CAUTION

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