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BUY55 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUY55
Descripción Electrónicos  Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUY55 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUY55
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 20mA; IB= 0
125
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 0.875A
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 7A; VCE= 1.5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
VCB= 150V; IE= 0; TC= 150℃
1.0
10
mA
ICES
Collector Cutoff Current
VCE= 150V; VBE= 0
VCE= 150V; VBE= 0; TC= 150℃
1.0
10
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 2A; VCE= 1.5V
25
160
hFE-2
DC Current Gain
IC= 7A; VCE= 1.5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V
20
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
200
pF
Switching Times
ton
Turn-On Time
IC= 6A; IB1= -IB2= 1A
2.0
μs
toff
Turn-Off Time
2.0
μs
ts
Storage Time
1.2
μs



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