BUY55 datasheet(1/2 Pages) ISC

No. de pieza	BUY55

Descripción Electrónicos	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BUY55

DESCRIPTION

·

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 125V(Min.)

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V@ IC= 7A

APPLICATIONS

·Designed for general switching applications at higher outputs.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

150

V

VCES

Collector-Emitter Voltage

150

V

VCEO

Collector-Emitter Voltage

125

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IB

Base Current-Continuous

2

A

PC

Collector Power Dissipation

@TC≤75℃

60

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.66

℃/W

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Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
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BUY55 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BUY55 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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