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KSD986 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza KSD986
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSD986 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  KSD986 Datasheet HTML 1Page - Inchange Semiconductor Company Limited KSD986 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Darlington Power Transistor
KSD986
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 1mA
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
10
μ
A
ICER
Collector Cutoff Current
VCE=60V;RBE=51Ω;TC=125℃
1.0
mA
ICEX
Collector Cutoff Current
VCE= 60V; VBE(off)= -1.5A
10
μ
A
VCE= 60V; VBE(off)= -1.5A
TC=125℃
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
1000
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
2000
30000
Switching Times
ton
Turn-on Time
IC=1.0A; IB1=-IB2=1.0mA
VCC=50V; RL=50Ω
0.5
μ
s
tstg
Storage Time
1.0
μ
s
tf
Fall Time
1.0
μ
s
hFE-2 Classifications
R
O
Y
2000-5000
4000-10000
8000-30000



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