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KSD986 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza KSD986
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSD986 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Darlington Power Transistor
KSD986
DESCRIPTION
·
Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.)
·
DC Current Gain-
: hFE = 2000(Min) @ IC= 1A
·
Low Collector Saturation Voltage
APPLICATIONS
·
They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Pulse
3.0
A
IB
Base Current
0.15
A
PC
Collector Power Dissipation
Ta=25℃
1.0
W
Collector Power Dissipation
TC=25℃
10
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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