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DMS2085LSD Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza DMS2085LSD
Descripción Electrónicos  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMS2085LSD Datasheet(HTML) 2 Page - Diodes Incorporated

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DMS2085LSD
Document number: DS36926 Rev. 2 - 2
2 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.3
-2.7
A
t<10s
TA = +25°C
TA = +70°C
ID
-4.3
-3.4
A
Maximum Body Diode Forward Current (Note 6)
IS
-1.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-11.2
A
Avalanche Current (Notes 7) L = 5mH
IAR
-5
A
Avalanche Energy (Notes 7) L = 5mH
EAR
50
mJ
Maximum Ratings – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
Average Rectified Output Current (Note 7, t<10s)
IO
1
A
Peak Repetitive Forward Current (Note 7, t<10s)
IFRM
2
A
Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)
Single half sine-wave superimposed on rated load
IFSM
20
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.1
W
TA = +70°C
1.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
108
°C/W
t<10s
65
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.8
W
TA = +70°C
2.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
78
°C/W
t<10s
50
Thermal Resistance, Junction to Case (Note 6)
RθJC
22
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C



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