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DMS2085LSD Datasheet(PDF) 3 Page - Diodes Incorporated

No. de pieza DMS2085LSD
Descripción Electrónicos  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMS2085LSD Datasheet(HTML) 3 Page - Diodes Incorporated

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DMS2085LSD
Document number: DS36926 Rev. 2 - 2
3 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-0.5
-1.5
-2.2
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
70
85
mΩ
VGS = -10V, ID = -3.05A
100
125
VGS = -4.5V, ID = -1.50A
Diode Forward Voltage
VSD
-0.8
-1.0
V
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
353
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
49
Reverse Transfer Capacitance
Crss
41
Gate Resistance
RG
6.2
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
3.7
nC
VDS = -15V, ID = -3A
Total Gate Charge (VGS = -10V)
Qg
7.8
Gate-Source Charge
Qgs
1.1
Gate-Drain Charge
Qgd
1.3
Turn-On Delay Time
tD(on)
3.3
nS
VDS = -15V,RL = 15Ω
VGS = -10V, RG = 6Ω
Turn-On Rise Time
tr
3.0
Turn-Off Delay Time
tD(off)
14
Turn-Off Fall Time
tf
6.8
Body Diode Reverse Recovery Time
trr
33
nS
IS = -3.05A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
46
nC
IS = -3.05A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
0.0
3.0
6.0
9.0
12.0
15.0
0
0.5
1
1.5
2
2.5
3
V= -1.8V
GS
V= -2.5V
GS
V= -3.0V
GS
V= -3.5V
GS
V= -10V
GS
V= -4.0V
GS
V= -4.5V
GS
V= -2.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V
= -5.0V
DS



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