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BUV28AF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV28AF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors BUV28F/AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUV28F IC= 0.2A ;IB= 0; L= 25mH 200 V BUV28AF 225 VCE(sat) Collector-Emitter Saturation Voltage BUV28F IC= 6A; IB= 0.6A 1.5 V BUV28AF IC= 4A; IB= 0.4A 1.5 VBE(sat) Base-Emitter Saturation Voltage BUV28F IC= 6A; IB= 0.6A 2.0 V BUV28AF IC= 4A; IB= 0.4A 2.0 ICEX Collector Cutoff Current VCE=VCESmax;VBE=-1.5V,TJ=125℃ 1.0 mA ICES Collector Cutoff Current VCE=VCESmax;VBE=0,TJ=125℃ 3.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA Switching Times; Resistive Load ton Turn-On Time For BUV28F IC= 6A; IB1= 0.6A; IB2= -1.2A For BUV28AF IC= 4A; IB1= 0.4A; IB2= -0.8A 0.3 1.0 μs tstg Storage Time 0.5 1.5 μs tf Fall Time 0.1 0.25 μs |
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