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BUV28AF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUV28AF
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV28AF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistors
BUV28F/AF
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUV28F
225V(Min)- BUV28AF
·High Switching Speed
APPLICATIONS
·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
VBE= 0
BUV28F
400
V
BUV28AF
450
VCEO
Collector-Emitter Voltage
BUV28F
200
V
BUV28AF
225
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@ TC=25℃
18
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
7.0
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
55
℃/W


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