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INA114 Datasheet(PDF) 2 Page - Texas Instruments

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No. de pieza INA114
Descripción Electrónicos  Precision INSTRUMENTATION AMPLIFIER
PDF  17 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

INA114 Datasheet(HTML) 2 Page - Texas Instruments

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®
INA114
2
SPECIFICATIONS
ELECTRICAL
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
T Specification same as INA114BP/BU.
NOTE: (1) Temperature coefficient of the “50k
Ω” term in the gain equation.
INA114BP, BU
INA114AP, AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INPUT
Offset Voltage, RTI
Initial
TA = +25°C
±10 + 20/G
±50 + 100/G
±25 + 30/G ±125 + 500/G
µV
vs Temperature
TA = TMIN to TMAX
±0.1 + 0.5/G ±0.25 + 5/G
±0.25 + 5/G
±1 + 10/G
µV/°C
vs Power Supply
VS = ±2.25V to ±18V
0.5 + 2/G
3 + 10/G
TT
µV/V
Long-Term Stability
±0.2 + 0.5/G
T
µV/mo
Impedance, Differential
1010 || 6
T
Ω || pF
Common-Mode
1010 || 6
T
Ω || pF
Input Common-Mode Range
±11
±13.5
TT
V
Safe Input Voltage
±40
T
V
Common-Mode Rejection
VCM = ±10V, ∆RS = 1kΩ
G = 1
80
96
75
90
dB
G = 10
96
115
90
106
dB
G = 100
110
120
106
110
dB
G = 1000
115
120
106
110
dB
BIAS CURRENT
±0.5
±2
T
±5nA
vs Temperature
±8
T
pA/
°C
OFFSET CURRENT
±0.5
±2
T
±5nA
vs Temperature
±8
T
pA/
°C
NOISE VOLTAGE, RTI
G = 1000, RS = 0Ω
f = 10Hz
15
T
nV/
√Hz
f = 100Hz
11
T
nV/
√Hz
f = 1kHz
11
T
nV/
√Hz
fB = 0.1Hz to 10Hz
0.4
T
µVp-p
Noise Current
f=10Hz
0.4
T
pA/
√Hz
f=1kHz
0.2
T
pA/
√Hz
fB = 0.1Hz to 10Hz
18
T
pAp-p
GAIN
Gain Equation
1 + (50k
Ω/R
G)
T
V/V
Range of Gain
1
10000
TT
V/V
Gain Error
G = 1
±0.01
±0.05
TT
%
G = 10
±0.02
±0.4
T
±0.5
%
G = 100
±0.05
±0.5
T
±0.7
%
G = 1000
±0.5
±1
T
±2%
Gain vs Temperature
G = 1
±2
±10
T
±10
ppm/
°C
50k
Ω Resistance(1)
±25
±100
TT
ppm/
°C
Nonlinearity
G = 1
±0.0001
±0.001
T
±0.002
% of FSR
G = 10
±0.0005
±0.002
T
±0.004
% of FSR
G = 100
±0.0005
±0.002
T
±0.004
% of FSR
G = 1000
±0.002
±0.01
T
±0.02
% of FSR
OUTPUT
Voltage
IO = 5mA, TMIN to TMAX
±13.5
±13.7
TT
V
VS = ±11.4V, RL = 2kΩ±10
±10.5
TT
V
VS = ±2.25V, RL = 2kΩ±1
±1.5
TT
V
Load Capacitance Stability
1000
T
pF
Short Circuit Current
+20/–15
T
mA
FREQUENCY RESPONSE
Bandwidth, –3dB
G = 1
1
T
MHz
G = 10
100
T
kHz
G = 100
10
T
kHz
G = 1000
1
T
kHz
Slew Rate
VO = ±10V, G = 10
0.3
0.6
TT
V/
µs
Settling Time,
0.01%
G = 1
18
T
µs
G = 10
20
T
µs
G = 100
120
T
µs
G = 1000
1100
T
µs
Overload Recovery
50% Overdrive
20
T
µs
POWER SUPPLY
Voltage Range
±2.25
±15
±18
TT
T
V
Current
VIN = 0V
±2.2
±3
TT
mA
TEMPERATURE RANGE
Specification
–40
85
TT
°C
Operating
–40
125
TT
°C
θ
JA
80
T
°C/W



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