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BDS19 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDS19 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() NCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BDS19 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= 2V -1.0 V ICBO Collector Cutoff Current VCE= -150V; VBE= 0 -0.02 mA ICEO Collector Cutoff Current VCE= -75V; VBE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.01 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 40 250 hFE-2 DC Current Gain IC=-4A; VCE= -2V 15 150 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 30 MHz |
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