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BDS19 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDS19 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() NCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor BDS19 DESCRIPTION · High Voltage: VCEV= -150V(Min) · Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A · High Reliablity APPLICATIONS · Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current -2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
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