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2SD1609 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1609 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor iisc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 160 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Vltage IE=0.1mA ; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA 2.0 V VBE(on) Base-Emitter Saturation Voltage IC= 10mA ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 10 μ A hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 60 320 hFE-2 DC Current Gain IC= 1mA ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 5V 140 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 14 pF hFE-1 Classifications B C D 60-120 100-200 160-320 |
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