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2SD1609 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1609
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1609 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD1609
DESCRIPTION
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·
Good Linearity of hFE
·
100% avalanche tested
·
Complement to Type 2SB1109
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low frequency and high-voltage amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.1
A
PC
Collector Power Dissipation
@ TC=25℃
12.5
W
Collector Power Dissipation
@ Ta=25℃
1.25
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-45~150
℃


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