| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
DS1135LZ2012 Datasheet(PDF) 5 Page - Dallas Semiconductor |
|
|
|||||||||||||||||||||||||||||
DS1135LZ2012 Datasheet(HTML) 5 Page - Dallas Semiconductor |
|
5 / 6 page ![]() DS1135-L 5 of 6 TEST CONDITIONS Ambient Temperature: 25 °C ± 3°C Supply Voltage (VCC ): 3.3V ± 0.1V Input Pulse: High: 3.0V ± 0.1V Low: 0.0V ± 0.1V Source Impedance: 50 W Max. Rise and Fall Time: 3.0ns Max. — Measured between 0.6V and 2.4V. Pulse Width: 500ns Pulse Period: 1 ms Output Load Capacitance: 15pF Output: Each output is loaded with the equivalent of one 74F04 input gate. Data is measured at the 1.5V level on the rising and falling edges. Note: The above conditions are for test only and do not restrict the devices under other data sheet conditions. TIMING DIAGRAM NOTES: 1. All voltages are referenced to ground. 2. Power-up time is the time from the application of power to the time stable delays are being produced at the output. tFALL 80% tRISE 20% IN OUT 1.5V 1.5V tWI tWI PERIOD 1.5V 1.5V 1.5V tPLH tPHL tOF tOR |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |