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STGD19N40LZ Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGD19N40LZ
Descripción Electrónicos  Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
PDF  17 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD19N40LZ Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
October 2016
DocID024506 Rev 6
1/17
STGD19N40LZ
Automotive-grade 390 V internally clamped IGBT
ESCIS 180 mJ
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most
advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gate-
emitter provide overvoltage protection
capabilities. The device also exhibits low on-state
voltage drop and low threshold drive for use in
automotive ignition systems.
DPAK
1
3
TAB
C (2 or TAB)
E (3)
G (1)
RG
RGE
SC30180
Table 1. Device summary
Order code
Marking
Packages
Packing
STGD19N40LZ
GD19N40LZ
DPAK
Tape and reel
www.st.com


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