STM32L432KB datasheet(98/149 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L432KB STM3L432KC

98/149

DocID028798 Rev 2

6.3.10

Flash memory characteristics

Table 49. Flash memory characteristics(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions

Typ

Max

Unit

tprog

64-bit programming time

81.69

90.76

µs

tprog_row

one row (32 double

word) programming time

normal programming

2.61

2.90

fast programming

1.91

2.12

tprog_page

one page (2 Kbyte)

programming time

normal programming

20.91

23.24

fast programming

15.29

16.98

tERASE

Page (2 KB) erase time

22.02

24.47

tprog_bank

one bank (512 Kbyte)

programming time

normal programming

5.35

5.95

fast programming

3.91

4.35

tME

Mass erase time

(one or two banks)

22.13

24.59

IDD

Average consumption

from VDD

Write mode

3.4

Erase mode

3.4

Maximum current (peak)

Write mode

7 (for 2 μs)

Erase mode

7 (for 41 μs)

Table 50. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by characterization results.

Unit

NEND

Endurance

TA = –40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

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