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ACE25AC100GFMLTH Datasheet(PDF) 9 Page - ACE Technology Co., LTD.

No. de pieza ACE25AC100GFMLTH
Descripción Electrónicos  SPI NOR FLASH
PDF  23 Pages
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Fabricante Electrónico  ACE [ACE Technology Co., LTD.]
Página de inicio  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE25AC100GFMLTH Datasheet(HTML) 9 Page - ACE Technology Co., LTD.

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ACE25AC100G
SPI NOR FLASH
VER 1.1
9
Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,
each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher address
after each byte of data is shifted out. Therefore, the whole memory can be read with a single Read Data
Bytes (READ) command. During an Erase, Program or Write cycle, Read Data Byte (READ) command
will be rejected without affecting the cycle in progress.
Read Data Bytes At Higher Speed (Fast Read) (0BH)
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed
by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK.
Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max
frequency fC, during the falling edge of SCLK. The first byte address can be at any location. The address
is automatically incremented to the next higher address after each byte of data is shifted out.
Figure5. Read Data Bytes Sequence Diagram
Figure6. Read Data Bytes at Higher Speed Sequence Diagram



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