| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Vishay Siliconix |
VB30M120C
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|
|
VB30M120C
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|
 Inchange Semiconductor ... |
VB30M120C
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30M120C-E3
|
93Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
03-Jan-17
|
|
VB30M120C-E3/4W
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|
|
VB30M120C-E3/8W
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|
|
VB30M120C-M3
|
93Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
03-Jan-17
|
 Inchange Semiconductor ... |
VB30M120C-M3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30M120C-M3/I
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|
|
VB30M120CHM3
|
93Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
03-Jan-17
|
|
VB30M120C
|
105Kb/4P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A
20-Jun-2018
|