VB30M Datasheet, PDF

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	VB30M120C	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018
Vishay Siliconix	VB30M120C	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018
Inchange Semiconductor ...	VB30M120C	315Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB30M120C-E3	93Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 03-Jan-17
	VB30M120C-E3/4W	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018
	VB30M120C-E3/8W	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018
	VB30M120C-M3	93Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 03-Jan-17
Inchange Semiconductor ...	VB30M120C-M3	315Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB30M120C-M3/I	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018
	VB30M120CHM3	93Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 03-Jan-17
	VB30M120C	105Kb/4P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 20-Jun-2018

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