MBR540S / Sangdest Microelectronic (Nanjing) Co., Ltd

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Part No.	MBR540S
Manufacturer	SMC
Size	242 Kbytes
Pages	5 pages
Description	SCHOTTKY RECTIFIER

Datasheet Summary with AI

# MBR540S SCHOTTKY RECTIFIER

Applications:

️· Switching power supply
️· Converters
️· Free-Wheeling diodes
️· Reverse battery protection
️· Center tap configuration

Features:

️· Designed as Bypass Diodes for Solar Panels for High Thermal Reliability
️· High Forward Surge Capability
️· Ultra Low Forward Voltage Drop
️· Excellent High Temperature Stability
️· Pb-Free Device
️· Traceable to wafer lot
️· Additional testing available

Mechanical Dimensions: TO-277B

Ordering Information:

Device Package Shipping

MBR540S TO-277B(Pb-Free) 5000pcs/ reel

Maximum Ratings:

Characteristics Symbol Max. Units

Peak Inverse Voltage VRWM 40 V

Average Forward Current IF(AV) 5 A

Peak One Cycle Non-Repetitive Surge Current IFSM 150 A

Electrical Characteristics:

Characteristics Symbol Condition Max. Units

Forward Voltage Drop VF1 @ 5A, Pulse, TJ = 25°C 0.52 V

Forward Voltage Drop VF2 @ 5A, Pulse, TJ = 125°C 0.45 V

Reverse Current IR1 @VR = rated VR, TJ = 25°C 1 mA

Reverse Current IR2 @VR = rated VR, TJ = 125°C 100 mA

Thermal-Mechanical Specifications:

Characteristics Symbol Specification Units

Junction Temperature TJ -55 to +125 °C

Storage Temperature Tstg -55 to +125 °C

Thermal Resistance Junction to Ambient RθJA 60 °C/W

Thermal Resistance Junction to Lead RθJL 3 °C/W

Approximate Weight wt 0.08 g

Disclaimer: Includes standard disclaimers regarding datasheet accuracy, liability, and export regulations.

Characteristics	Symbol	Max.	Units
Peak Inverse Voltage	VRWM	40	V
Average Forward Current	IF(AV)	5	A
Peak One Cycle Non-Repetitive Surge Current	IFSM	150	A

Characteristics	Symbol	Condition	Max.	Units
Forward Voltage Drop	VF1	@ 5A, Pulse, TJ = 25°C	0.52	V
Forward Voltage Drop	VF2	@ 5A, Pulse, TJ = 125°C	0.45	V
Reverse Current	IR1	@VR = rated VR, TJ = 25°C	1	mA
Reverse Current	IR2	@VR = rated VR, TJ = 125°C	100	mA

Characteristics	Symbol	Specification	Units
Junction Temperature	TJ	-55 to +125	°C
Storage Temperature	Tstg	-55 to +125	°C
Thermal Resistance Junction to Ambient	RθJA	60	°C/W
Thermal Resistance Junction to Lead	RθJL	3	°C/W
Approximate Weight	wt	0.08	g