RA4M1 datasheet(35/130 Pages) RENESAS

35 / 130 page

R01DS0355EJ0100 Rev.1.00

Page 35 of 130

Oct 8, 2019

RA4M1 Group

2. Electrical Characteristics

Note 1.

Except for ports P200, P214, P215, which are input ports.

Note 2.

Except for P212, P213.

Table 2.9

I/O VOH, VOL (3)

Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LCO = 1.6 to 2.7 V

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Output voltage

Ports P000 to P015

Low drive

VOH

AVCC0 - 0.3

IOH = -0.5 mA

VOL

0.3

IOL = 0.5 mA

Middle drive

VOH

AVCC0 - 0.3

IOH = -1.0 mA

VOL

0.3

IOL = 1.0 mA

Ports P914, P915

VOH

VCC_USB - 0.3

IOH = -0.5 mA

VOL

0.3

IOL = 0.5 mA

Other output pins*1

Low drive

VOH

VCC - 0.3

IOH = -0.5 mA

VOL

0.3

IOL = 0.5 mA

Middle

drive*2

VOH

VCC - 0.3

IOH = -1.0 mA

VOL

0.3

IOL = 1.0 mA

Table 2.10

I/O other characteristics

Conditions: VCC = AVCC0 = 1.6 to 5.5 V

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input leakage current

RES, P200, P214, P215

| Iin |

1.0

μA

Vin = 0 V

Vin = VCC

Three-state leakage

current (off state)

5 V-tolerant ports

| ITSI |

1.0

μA

Vin = 0 V

Vin = 5.8 V

Other ports

(except for ports P200, P214,

P215 and 5 V tolerant)

1.0

Vin = 0 V

Vin = VCC

Input pull-up resistor

All ports

(except for ports P200, P214,

P215, P914, P915)

kΩ

Vin = 0 V

Input capacitance

P914, P915,

P100 to P103, P111, P112,

P200

Cin

Vin = 0 V

f = 1 MHz

Ta = 25°C

Other input pins

RA4M1 Datasheet(PDF) 35 Page - Renesas Technology Corp

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