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RA4M1 Datasheet(PDF) 27 Page - Renesas Technology Corp

No. de pieza RA4M1
Descripción Electrónicos  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M1 Datasheet(HTML) 27 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 27 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.
Electrical Characteristics
Unless otherwise specified, the electrical characteristics of the MCU are defined under the following conditions:
VCC*1 = AVCC0 = VCC_USB*2 = VCC_USB_LDO*2 = 1.6 to 5.5V, VREFH = VREFH0 = 1.6 to AVCC0, VBATT =
1.6 to 3.6V, VSS = AVSS0 = VREFL = VREFL0 = VSS_USB = 0V, Ta = Topr.
Note 1. The typical condition is set to VCC = 3.3V.
Note 2. When USBFS is not used.
Figure 2.1 shows the timing conditions.
Figure 2.1
Input or output timing measurement conditions
The recommended measurement conditions for the timing specification of each peripheral provided are for the best
peripheral operation. Make sure to adjust the driving abilities of each pin to meet your conditions.
Each function pin used for the same function must select the same drive ability. If the I/O drive ability of each function
pin is mixed, the AC specification of each function is not guaranteed.
For example P100
C
VOH = VCC × 0.7, VOL = VCC × 0.3
VIH = VCC × 0.7, VIL = VCC × 0.3
Load capacitance C = 30 pF



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